Pretraga
Rezultati
Transport coefficients for electrons in mixtures of Ar and HBr [2007]
Sasic, Olivera M; Dujko, Sasa
; Petrovic, Zoran Lj ; Makabe, Toshiaki
Temperature and gate bias effects on gamma-irradiated Al-gate metal-oxide-semiconductor transistors
[1994]
Pejović, Momčilo ; Golubović, Snežana ; Ristić, Goran ; Odalović, Milan
Annealing influence on recovery of electrically stressed power vertical double-diffused metal oxide semiconductor transistors
[2015]
Đorić-Veljković, Snežana ; Manić, Ivica ; Davidović, Vojkan ; Danković, Danijel ; Golubović, Snežana ; Stojadinović, Ninoslav
Experimental investigation of breakdown voltage and electrical breakdown time delay of commercial gas discharge tubes [2011]
Pejović, Milić ; Pejović, Momčilo ; Stanković, Koviljka
Experimental and first-principles studies of high-pressure effects on the structural, electronic, and optical properties of semiconductors and lanthanide doped solids
[2017]
Brik, M.G. ; Mahlik, S.; Jankowski, D.; Strak, P.; Korona, K.P.; Monroy, E.; Krukowski, S.; Kaminska, A.
Radioactive reliability of programmable memories
[2001]
Lončar, Boris B. ; Osmokrović, Predrag; Stojanović, M.; Stanković, Srboljub J.
Effects of consecutive irradiation and bias temperature stress in p-channel power vertical double-diffused metal oxide semiconductor transistors
[2018]
Davidović, Vojkan ; Danković, Danijel ; Ilić, Aleksandar; Manić, Ivica ; Golubović, Snežana ; Đorić-Veljković, Snežana ; Prijić, Zoran ; Prijić, Aneta ; Stojadinović, Ninoslav
Relativistic calculations of complete 4f<sup>n</sup> energy level schemes of free trivalent rare-earth ions
[2005]
Ogasawara, K.; Watanabe, S.; Ishii, T.; Brik, M.G.
Correlation of Structural and Optical Properties of Sputtered FeSi2 Thin Films [2010]
Milosavljević, Momir ; Wong, Lewis; Lourenco, Manon; Valizadeh, Reza; Colligon, John; Shao, Guosheng; Homewood, Kevin P.
Calculations of complete 4f<sup>n</sup> and 4f<sup>n-1</sup>5d<sup>1</sup> energy level schemes of free trivalent rare-earth ions
[2004]
Ogasawara, K.; Watanabe, S.; Sakai, Y.; Toyoshima, H.; Ishii, T.; Brik, M.G. ; Tanaka, I.
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