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Pregled prema Autor Hongliang Dong

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GodinaNaslovAutor(i)Tip rezultataMp-kat.
2022A tunable band gap of the layered semiconductor Zn3In2S6 under pressureResta A. Susilo; Yu Liu; Hongwei Sheng; Hongliang Dong; Raimundas Sereika; Bongjae Kim; Zhixiang Hu; Shujia Li; Mingzhi Yuan; Petrović, Čedomir  ;
Bin Chen;
Article
21aM21a
2020Band gap crossover and insulator–metal transition in the compressed layered CrPS4Resta Susilo; Bo Gyu Jang; Jiajia Feng; Qianheng Du; Zhipeng Yan; Hongliang Dong; Mingzhi Yuan; Petrović, Čedomir  ; Ji Hoon Shim; Duck Young Kim;
Bin Chen;
Naučni članak
21aM21a - Vodeći međunarodni časopis kategorije M21a