eNauka - pregled
Pregled prema Autor Hongwei Sheng
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| Godina | Naslov | Autor(i) | Tip rezultata | Mp-kat. |
|---|---|---|---|---|
| 2022 | A tunable band gap of the layered semiconductor Zn3In2S6 under pressure | Resta A. Susilo; Yu Liu; Hongwei Sheng; Hongliang Dong; Raimundas Sereika; Bongjae Kim; Zhixiang Hu; Shujia Li; Mingzhi Yuan; Petrović, Čedomir   ;
Bin Chen;
| Article | 21aM21a |