Researchers
Tomić, Stanko
Results 121-140 of 159
| Issue Date | Title | Author(s) | Type | Мp-cat. |
|---|---|---|---|---|
| 2003 | High-pressure studies of recombination mechanisms in 1.3-μm GaInNAs quantum-well lasers | Jin, S.R.; Sweeney, S.J.; Tomic, Stanko   ; Adams, A.R.; Riechert, H. | Article | 21aM21a |
| 2003 | Novel electronic and optoelectronic properties of GaInNAs and related alloys | O'Reilly, E.P.; Fahy, S.; Lindsay, A.; Tomić, Stanko ; Fehse, R.; Adams, A.R.; Sweeney, S.J.; Andreev, A.D.; Klar, P.J.; Grüning, H.;
Riechert, H.;
| Conference Paper | Mp. category will be shown later |
| 2003 | Spectroscopic characterization of 1450 nm semiconductor pump laser structures for Raman amplifiers | Constant, S. B.; Tomić, Stanko ; Lock, D.; Sale, T. E.; Sweeney, S. J.; Hosea, T. J. C. | Article | 21aM21a |
| 2003 | Determining the band-structure of an InGaNAs/GaAs semiconductor laser structure using non-destructive photomodulated reflectance measurements and k·p studies | Choulis, S.A.; Tomić, Stanko ; O'Reilly, E.P.; Hosea, T.J.C. | Article | 21M21 |
| 2003 | Investigation of 1.3-μm GaInNAd vertical-cavity surface-emitting lasers (VCSELs) using temperature, high-pressure, and modeling techniques | Knowles, G.; Fehse, R.; Tomić, Stanko ; Sweeney, S.J.; Sale, T.E.; Adams, A.R.; O'Reilly, E.P.; Steinle, G.; Riechert, H. | Article | 21aM21a |
| 2003 | Gain‐cavity alignment profiling of 1.3 μm emitting GaInNAs vertical cavity surface emitting lasers (VCSELs) using high pressure techniques | Knowles, G.; Tomić, Stanko ; Jin, S.; Fehse, R.; Sweeney, S. J.; Sale, T. E.; Adams, A. R. | Article | 22M22 |
| 2003 | Pressure and k · p studies of band parameters in dilute‐N GaInNAs/GaAs multiple quantum wells | Choulis, S. A.; Hosea, T. J. C.; Tomić, Stanko ; Kamal‐Saadi, M.; Weinstein, B. A.; O'Reilly, E. P.; Adams, A. R.; Klar, P. J. | Article | 22M22 |
| 2003 | Carrier recombination processes in MOVPE and MBE grown 1.3 μm GaInNAs edge emitting lasers | Fehse, R.; Adams, A.R.; Sweeney, S.J.; Tomic, Stanko ; Riechert, H.; Ramakrishnan, A. | Article | 21M21 |
| 2003 | Monitoring the non-parabolicity of the conduction band in GaN0.018As0.982/GaAs quantum wells | Klar, P.J.; Grüning, H.; Heimbrodt, W.; Koch, J.; Stolz, W.; Tomić, Stanko ; O’Reilly, E.P. | Article | 21M21 |
| 2003 | Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers | Tomic, Stanko ; O'Reilly, E.P.; Fehse, R.; Sweeney, S.J.; Adams, A.R.; Andreev, A.D.; Choulis, S.A.; Hosea, T.J.C.; Riechert, H. | Article | 21aM21a |
| 2003 | Digitally graded GaAs/Al0.44Ga0.56As quantum-cascade laser | Indjin, D ; Tomić, S ; Ikonić, Z; Harrison, P; Kelsall, RW; Milanović, V.; Kočinac, Saša | Article | 22M22 |
| 2003 | Unusual increase of the Auger recombination current in 1.3 μm GaInNAs quantum-well lasers under high pressure | Jin, S. R.; Sweeney, S. J.; Tomić, Stanko ; Adams, A. R.; Riechert, H. | Article | 21a+M21a+ |
| 2003 | Derivation of a 10-band model for dilute nitride semiconductors | Lindsay, A.; Tomić, Stanko ; O’Reilly, E.P. | Article | 21M21 |
| 2002 | Electronic structure ofInyGa1−yAs1−xNx/GaAsmultiple quantum wells in the dilute-Nregime from pressure andk⋅pstudies | Choulis, S. A.; Hosea, T. J. C.; Tomić, Stanko ; Kamal-Saadi, M.; Adams, A. R.; O’Reilly, E. P.; Weinstein, B. A.; Klar, P. J. | Article | 21aM21a |
| 2002 | Gain optimization in optically pumped unipolar quantum-well lasers | S. Tomić ; V. Milanović; Z. Ikonić | Article | 22M22 |
| 2002 | Tight-binding and k·p models for the electronic structure of Ga(In)NAs and related alloys | O Reilly, E P; Lindsay, A; Tomić, Stanko ; Kamal-Saadi, M | Article | 21M21 |
| 2002 | Interband transitions of quantum wells and device structures containing Ga(N, As) and (Ga, In)(N, As) | Klar, P J; Gr ning, H; Heimbrodt, W; Weiser, G; Koch, J; Volz, K; Stolz, W; Koch, S W; Tomić, Stanko ; Choulis, S A;
Hosea, T J C; O Reilly, E P; Hofmann, M; Hader, J; Moloney, J V;
| Article | 21M21 |
| 2002 | Gain characteristics of ideal dilute nitride quantum well lasers | Tomić, Stanko ; O'Reilly, E.P | Article | 22M22 |
| 2002 | N-composition and pressure dependence of the inter band transitions of Ga(N,As)/GaAs quantum wells | Gruning, H; Klar, PJ; Heimbrodt, W; Koch, J; Stolz, W; Lindsay, A; Tomić, Stanko ; O'Reilly, EP | Article | 22M22 |
| 2002 | A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers | Fehse, R.; Tomić, Stanko ; Adams, A.R.; Sweeney, S.J.; O'Reilly, E.P.; Andreev, A.; Riechert, H. | Article | 21a+M21a+ |