Researchers

Results 121-140 of 159
Issue DateTitleAuthor(s)TypeМp-cat.
2003Derivation of a 10-band model for dilute nitride semiconductorsLindsay, A.; Tomić, Stanko  ; O’Reilly, E.P.Article
21M21
2003Unusual increase of the Auger recombination current in 1.3 μm GaInNAs quantum-well lasers under high pressureJin, S. R.; Sweeney, S. J.; Tomić, Stanko  ; Adams, A. R.; Riechert, H.Article
21a+M21a+
2003Monitoring the non-parabolicity of the conduction band in GaN0.018As0.982/GaAs quantum wellsKlar, P.J.; Grüning, H.; Heimbrodt, W.; Koch, J.; Stolz, W.; Tomić, Stanko  ; O’Reilly, E.P.Article
21M21
2003Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasersTomic, Stanko  ; O'Reilly, E.P.; Fehse, R.; Sweeney, S.J.; Adams, A.R.; Andreev, A.D.; Choulis, S.A.; Hosea, T.J.C.; Riechert, H.Article
21aM21a
2003Digitally graded GaAs/Al0.44Ga0.56As quantum-cascade laserIndjin, D ; Tomić, S  ; Ikonić, Z; Harrison, P; Kelsall, RW; Milanović, V.; Kočinac, Saša  Article
22M22
2003Pressure and k · p studies of band parameters in dilute‐N GaInNAs/GaAs multiple quantum wellsChoulis, S. A.; Hosea, T. J. C.; Tomić, Stanko  ; Kamal‐Saadi, M.; Weinstein, B. A.; O'Reilly, E. P.; Adams, A. R.; Klar, P. J.Article
22M22
2003Investigation of 1.3-μm GaInNAd vertical-cavity surface-emitting lasers (VCSELs) using temperature, high-pressure, and modeling techniquesKnowles, G.; Fehse, R.; Tomić, Stanko  ; Sweeney, S.J.; Sale, T.E.; Adams, A.R.; O'Reilly, E.P.; Steinle, G.; Riechert, H.Article
21aM21a
2003Determining the band-structure of an InGaNAs/GaAs semiconductor laser structure using non-destructive photomodulated reflectance measurements and k·p studiesChoulis, S.A.; Tomić, Stanko  ; O'Reilly, E.P.; Hosea, T.J.C.Article
21M21
2003Spectroscopic characterization of 1450 nm semiconductor pump laser structures for Raman amplifiersConstant, S. B.; Tomić, Stanko  ; Lock, D.; Sale, T. E.; Sweeney, S. J.; Hosea, T. J. C.Article
21aM21a
2003Novel electronic and optoelectronic properties of GaInNAs and related alloysO'Reilly, E.P.; Fahy, S.; Lindsay, A.; Tomić, Stanko  ; Fehse, R.; Adams, A.R.; Sweeney, S.J.; Andreev, A.D.; Klar, P.J.; Grüning, H.;
Riechert, H.;
Conference Paper
Mp. category will be shown later
2003High-pressure studies of recombination mechanisms in 1.3-μm GaInNAs quantum-well lasersJin, S.R.; Sweeney, S.J.; Tomic, Stanko  ; Adams, A.R.; Riechert, H.Article
21aM21a
2003Gain‐cavity alignment profiling of 1.3 μm emitting GaInNAs vertical cavity surface emitting lasers (VCSELs) using high pressure techniquesKnowles, G.; Tomić, Stanko  ; Jin, S.; Fehse, R.; Sweeney, S. J.; Sale, T. E.; Adams, A. R.Article
22M22
2003Carrier recombination processes in MOVPE and MBE grown 1.3 μm GaInNAs edge emitting lasersFehse, R.; Adams, A.R.; Sweeney, S.J.; Tomic, Stanko  ; Riechert, H.; Ramakrishnan, A.Article
21M21
2002Gain optimization in optically pumped unipolar quantum-well lasersS. Tomić  ; V. Milanović; Z. IkonićArticle
22M22
2002Gain-maximized GaAs/AlGaAs quantum-cascade laser with digitally graded active regionIndjin, D ; Tomić, S  ; Ikonić, Z; Harrison, P; Kelsall, RW; Milanović, V.; Kočinac, Saša  Article
21a+M21a+
2002On the interdiffusion-based quantum cascade laserKočinac, Saša  ; Tomić, S  ; Ikonić, Z; Milanović, V.Article
21aM21a
2002Experimental and theoretical analysis of the recombination processes in GaInNAs 1.3 μm LasersTomić, Stanko  ; Fehse, R.; Choulis, S.A.; O'Reilly, E.P.; Adams, A.R.; Sweeney, S.J.; Andreev, A.D.; Hosea, T.J.C.; Riechert, H.Conference Paper
Mp. category will be shown later
2002The temperature and pressure dependence of 1.3 μm GaInNAs vertical-cavity surface emitting lasers (VCSELs)Knowles, G.; Fehse, R.; Tomić, Stanko  ; Sweeney, S.J.; Sale, T.E.; Adams, A.R.; O'Reilly, E.P.; Steinle, G.; Riechert, H.Conference Paper
Mp. category will be shown later
2002A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasersFehse, R.; Tomić, Stanko  ; Adams, A.R.; Sweeney, S.J.; O'Reilly, E.P.; Andreev, A.; Riechert, H.Article
21a+M21a+
2002N-composition and pressure dependence of the inter band transitions of Ga(N,As)/GaAs quantum wellsGruning, H; Klar, PJ; Heimbrodt, W; Koch, J; Stolz, W; Lindsay, A; Tomić, Stanko  ; O'Reilly, EPArticle
22M22