Researchers
Tomić, Stanko
Results 121-140 of 159
| Issue Date | Title | Author(s) | Type | Мp-cat. |
|---|---|---|---|---|
| 2003 | Derivation of a 10-band model for dilute nitride semiconductors![]() | Lindsay, A.; Tomić, Stanko | Article | 21M21 |
| 2003 | Unusual increase of the Auger recombination current in 1.3 μm GaInNAs quantum-well lasers under high pressure![]() | Jin, S. R.; Sweeney, S. J.; Tomić, Stanko | Article | 21a+M21a+ |
| 2003 | Monitoring the non-parabolicity of the conduction band in GaN0.018As0.982/GaAs quantum wells![]() | Klar, P.J.; Grüning, H.; Heimbrodt, W.; Koch, J.; Stolz, W.; Tomić, Stanko | Article | 21M21 |
| 2003 | Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers![]() | Tomic, Stanko | Article | 21aM21a |
| 2003 | Digitally graded GaAs/Al0.44Ga0.56As quantum-cascade laser | Indjin, D | Article | 22M22 |
| 2003 | Pressure and k · p studies of band parameters in dilute‐N GaInNAs/GaAs multiple quantum wells![]() | Choulis, S. A.; Hosea, T. J. C.; Tomić, Stanko | Article | 22M22 |
| 2003 | Investigation of 1.3-μm GaInNAd vertical-cavity surface-emitting lasers (VCSELs) using temperature, high-pressure, and modeling techniques![]() | Knowles, G.; Fehse, R.; Tomić, Stanko | Article | 21aM21a |
| 2003 | Determining the band-structure of an InGaNAs/GaAs semiconductor laser structure using non-destructive photomodulated reflectance measurements and k·p studies![]() | Choulis, S.A.; Tomić, Stanko | Article | 21M21 |
| 2003 | Spectroscopic characterization of 1450 nm semiconductor pump laser structures for Raman amplifiers![]() | Constant, S. B.; Tomić, Stanko | Article | 21aM21a |
| 2003 | Novel electronic and optoelectronic properties of GaInNAs and related alloys![]() | O'Reilly, E.P.; Fahy, S.; Lindsay, A.; Tomić, Stanko
Riechert, H.;
| Conference Paper | Mp. category will be shown later |
| 2003 | High-pressure studies of recombination mechanisms in 1.3-μm GaInNAs quantum-well lasers![]() | Jin, S.R.; Sweeney, S.J.; Tomic, Stanko | Article | 21aM21a |
| 2003 | Gain‐cavity alignment profiling of 1.3 μm emitting GaInNAs vertical cavity surface emitting lasers (VCSELs) using high pressure techniques![]() | Knowles, G.; Tomić, Stanko | Article | 22M22 |
| 2003 | Carrier recombination processes in MOVPE and MBE grown 1.3 μm GaInNAs edge emitting lasers![]() | Fehse, R.; Adams, A.R.; Sweeney, S.J.; Tomic, Stanko | Article | 21M21 |
| 2002 | Gain optimization in optically pumped unipolar quantum-well lasers | S. Tomić | Article | 22M22 |
| 2002 | Gain-maximized GaAs/AlGaAs quantum-cascade laser with digitally graded active region | Indjin, D | Article | 21a+M21a+ |
| 2002 | On the interdiffusion-based quantum cascade laser | Kočinac, Saša | Article | 21aM21a |
| 2002 | Experimental and theoretical analysis of the recombination processes in GaInNAs 1.3 μm Lasers![]() | Tomić, Stanko | Conference Paper | Mp. category will be shown later |
| 2002 | The temperature and pressure dependence of 1.3 μm GaInNAs vertical-cavity surface emitting lasers (VCSELs)![]() | Knowles, G.; Fehse, R.; Tomić, Stanko | Conference Paper | Mp. category will be shown later |
| 2002 | A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers![]() | Fehse, R.; Tomić, Stanko | Article | 21a+M21a+ |
| 2002 | N-composition and pressure dependence of the inter band transitions of Ga(N,As)/GaAs quantum wells![]() | Gruning, H; Klar, PJ; Heimbrodt, W; Koch, J; Stolz, W; Lindsay, A; Tomić, Stanko | Article | 22M22 |
