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Browsing by Author Šašić, Rajko

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Issue DateTitleAuthor(s)TypeМp-cat.
19982D model of pseudomorphic InGaAs/InAlAs HEMT's structureRamović, Rifat M.; Šašić, Rajko; Andrin, RArticle
Mp. category will be shown later
2000A new approach to the velocity field investigation in case of the entry flow in curved pipes with circular cross sectionŠašić, Rajko; Sasić, SArticle
22M22
2006A new threshold voltage analytical model of strained Si/SiGe MOSFETLukić, Petar M.  ; Ramović, Rifat M.; Šašić, RajkoArticle
Mp. category will be shown later
2016A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFETOstojić, Stanko M.; Šašić, RajkoArticle
23M23
2000An analytical 3-D model for small dimensions MOSFETs' threshold voltagePilja, D.Z.; Šašić, Rajko; Ramović, Rifat M.; Tjapkin, D.A.Article
Mp. category will be shown later
2010Analytical model of MIS structure in electron devicesLukić, Vladan M.; Lukić, Petar M.  ; Šašić, RajkoArticle
52M52
2008Analytical model of a Si TFT with cylindrical source and drainRamović, Rifat M.; Lukić, Petar M.  ; Šašić, Rajko; Ostojić, Stanko M.Conference Paper
Mp. category will be shown later
2005Analytical model of electric field in heterojunction region of HFET structureLukić, Petar M.  ; Ramović, Rifat M.; Šašić, RajkoArticle
22M22
2011Analytical model of SiC DIMOSFET's drift region voltage impact on current-voltage characteristicsLukić, Petar M.  ; Šašić, Rajko; Lončar, Boris; Zunjić, A. G.Article
23M23
1997Graphic simulation of STM images of Si(111)7X7 surfaceRaić, Karlo  ; Šašić, Rajko; Petkovska, Menka  Article
Mp. category will be shown later
2005HEMT carrier mobility analytical modelLukić, Petar M.  ; Ramović, Rifat M.; Šašić, RajkoArticle
22M22
2006Influence of electrode material on gas-filled surge arresters characteristics in gamma and X radiation fieldLončar, Boris; Osmokrović, Predrag ; Stanković, Srboljub J.  ; Šašić, RajkoArticle
22M22
2006Influence of electrode materials and the manner of electrode surface processing on gas-filled surge arresters relevant characteristicsLončar, Boris; Osmokrović, P.; Vasić, A.  ; Šašić, RajkoArticle
Mp. category will be shown later
2005Influence of the electrode parameters on pulse shape characteristic of gas-filled surge arresters at small pressure and inter-electrode gap valuesOsmokrović, P.; Lončar, Boris; Šašić, RajkoArticle
22M22
2004Influence of the electrode parameters on the pulse shape characteristic at small pressure and inter-electrode gap valuesOsmokrović, P.; Lončar, Boris; Šašić, RajkoArticle
Mp. category will be shown later
2002Influence of the semiconductor doping level on the carrier surface density in an AlGaN/GaN MODFET channelŠašić, Rajko; Cevizović, D  ; Ramović, Rifat M.Article
22M22
2015Investigation of silicon carbide based high voltage and high power electronics componentsAbood, Imhimmad AlsadikDoctoral theses
70M70
2005Modeling and optimization of reliability of one redundant computer networkLukić, Petar M.  ; Ramović, Rifat M.; Šašić, RajkoArticle
Mp. category will be shown later
2014Modeling of carriers mobility impact on CNT FIET current-voltage characteristicsLukić, Petar M.  ; Šašić, RajkoArticle
23M23
2020Mogućnost primene komercijalnih VDMOS tranzistora snage kao senzora i dozimetara jonizujućeg zračenja izrađenih od elementarnih poluprovodničkih materijalaObrenović, Marija D.Doctoral theses
70M70