Prikaz rezultata 1 do 20 od 33
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| Godina | Naslov | Autor(i) | Tip rezultata | Mp-kat. |
| 1998 | 2D model of pseudomorphic InGaAs/InAlAs HEMT's structure | Ramović, Rifat M.; Šašić, Rajko; Andrin, R | Naučni članak | |
| 2000 | A new approach to the velocity field investigation in case of the entry flow in curved pipes with circular cross section | Šašić, Rajko; Sasić, S | Naučni članak | 22M22 - Međunarodni časopis kategorije M22 |
| 2006 | A new threshold voltage analytical model of strained Si/SiGe MOSFET | Lukić, Petar M.   ; Ramović, Rifat M.; Šašić, Rajko | Naučni članak | |
| 2016 | A simple model of current-voltage characteristic for surrounding gate short-channel nanowire MOSFET | Ostojić, Stanko M.; Šašić, Rajko | Naučni članak | 23M23 - Međunarodni časopis kategorije M23 |
| 2000 | An analytical 3-D model for small dimensions MOSFETs' threshold voltage | Pilja, D.Z.; Šašić, Rajko; Ramović, Rifat M.; Tjapkin, D.A. | Naučni članak | |
| 2010 | Analytical model of MIS structure in electron devices | Lukić, Vladan M.; Lukić, Petar M. ; Šašić, Rajko | Naučni članak | 52M52 - Nacionalni časopis kategorije M52 |
| 2008 | Analytical model of a Si TFT with cylindrical source and drain | Ramović, Rifat M.; Lukić, Petar M. ; Šašić, Rajko; Ostojić, Stanko M. | Conference Paper | |
| 2005 | Analytical model of electric field in heterojunction region of HFET structure | Lukić, Petar M. ; Ramović, Rifat M.; Šašić, Rajko | Article | |
| 2011 | Analytical model of SiC DIMOSFET's drift region voltage impact on current-voltage characteristics | Lukić, Petar M. ; Šašić, Rajko; Lončar, Boris; Zunjić, A. G. | Naučni članak | 23M23 - Međunarodni časopis kategorije M23 |
| 1997 | Graphic simulation of STM images of Si(111)7X7 surface | Raić, Karlo ; Šašić, Rajko; Petkovska, Menka | Article | |
| 2005 | HEMT carrier mobility analytical model | Lukić, Petar M. ; Ramović, Rifat M.; Šašić, Rajko | Article | |
| 2006 | Influence of electrode material on gas-filled surge arresters characteristics in gamma and X radiation field | Lončar, Boris; Osmokrović, Predrag ; Stanković, Srboljub J. ; Šašić, Rajko | Article | |
| 2006 | Influence of electrode materials and the manner of electrode surface processing on gas-filled surge arresters relevant characteristics | Lončar, Boris; Osmokrović, P.; Vasić, A. ; Šašić, Rajko | Article | |
| 2005 | Influence of the electrode parameters on pulse shape characteristic of gas-filled surge arresters at small pressure and inter-electrode gap values | Osmokrović, P.; Lončar, Boris; Šašić, Rajko | Article | |
| 2004 | Influence of the electrode parameters on the pulse shape characteristic at small pressure and inter-electrode gap values | Osmokrović, P.; Lončar, Boris; Šašić, Rajko | Article | |
| 2002 | Influence of the semiconductor doping level on the carrier surface density in an AlGaN/GaN MODFET channel | Šašić, Rajko; Cevizović, D ; Ramović, Rifat M. | Article | |
| 2015 | Investigation of silicon carbide based high voltage and high power electronics components | Abood, Imhimmad Alsadik | Doctoral theses | |
| 2005 | Modeling and optimization of reliability of one redundant computer network | Lukić, Petar M. ; Ramović, Rifat M.; Šašić, Rajko | Article | |
| 2014 | Modeling of carriers mobility impact on CNT FIET current-voltage characteristics | Lukić, Petar M. ; Šašić, Rajko | Article | |
| 2020 | Mogućnost primene komercijalnih VDMOS tranzistora snage kao senzora i dozimetara jonizujućeg zračenja izrađenih od elementarnih poluprovodničkih materijala | Obrenović, Marija D. | Doctoral theses | |