Pretraga
Rezultati
p-n transition capacitance [1971]
Đurić, Zoran G.
; Smiljanić, Miloljub; Tjapkin, D.
Impact of parameter extraction methodology on variances of extracted parameter values [2010]
Milovanović, Vladimir 
; van, der Toorn Ramses
Electron ground state in the semiconductor inversion layer and low frequency MIS capacitance [1976]
Đurić, Zoran G.; Spasojević, Ž.; Tjapkin, Dimitrije A.
Influence of carriers on the capacitance of p-n junctions with deep donors [1974]
Smiljanić, Miloljub; Tjapkin, D.; Đurić, Zoran G.
Static characteristics of the metal-insulator-semiconductor- insulator-metal (MISIM) structure—II. Low frequency capacitance [1975]
Đurić, Zoran G.; Smiljanić, Miloljub; Tjapkin, D.
Compact model of the IGBTs with localized lifetime control dedicated to power circuit simulations [2010]
Janković, Nebojša; Igic, Petar; Sakurai, Naoki
C–V profiling of ultra-shallow junctions using step-like background profiles [2010]
Popadić, Miloš; Milovanović, Vladimir ; Xu, Cuiqin; Sarubbi, Francesco; Nanver, Lis K.
On the design of tunable quantum well infrared photodetectors [1988]
Z. Ikonić; V. Milanović; D. TjapkinOptical emission diagnostics of etching of low-k dielectrics in a two frequency inductively coupled plasma [2007]
Miyauchi, M; Miyoshi, Y; Petrovic, Zoran Lj ; Makabe, Toshiaki
Static characteristics of metal-insulator-semiconductor-insulator-metal (MISIM) structures-I. Electric field and potential distributions [1975]
Đurić, Zoran G.; Smiljanić, Miloljub
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