Претрага
Резултати
Repeating of positive and negative high electric field stress and corresponding thermal post-stress annealing of the n-channel power VDMOSFETs [2008]
Aleksic, Sanja M
; Jaksic, Aleksandar B; Pejovic, Momcilo M
Static characteristics of the metal-insulator-semiconductor- insulator-metal (MISIM) structure—II. Low frequency capacitance [1975]
Đurić, Zoran G.; Smiljanić, Miloljub; Tjapkin, D.
A simple boundary condition at semiconductor-insulating substrate interface of a TFT [1977]
Smiljanić, MiloljubModelling of strained-Si/SiGe NMOS transistors including DC self-heating [2006]
Jankovic, Nebojsa D; Pesic, Tatjana V; O'Neill, AGSelf consistent fitting method for defect analysis by low-frequency noise measurements in reverse biased p-n junctions [1997]
Jevtic, MM; Lazovic, MVElectron ground state in the semiconductor inversion layer and low frequency MIS capacitance [1976]
Đurić, Zoran G.; Spasojević, Ž.; Tjapkin, Dimitrije A.
Impact of parameter extraction methodology on variances of extracted parameter values [2010]
Milovanović, Vladimir ; van, der Toorn Ramses
Influence of carriers on the capacitance of p-n junctions with deep donors [1974]
Smiljanić, Miloljub; Tjapkin, D.; Đurić, Zoran G.
p-n transition capacitance [1971]
Đurić, Zoran G.; Smiljanić, Miloljub; Tjapkin, D.
Static characteristics of metal-insulator-semiconductor-insulator-metal (MISIM) structures-I. Electric field and potential distributions [1975]
Đurić, Zoran G.; Smiljanić, Miloljub
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