Претрага
Резултати
Static characteristics of metal-insulator-semiconductor-insulator-metal (MISIM) structures-I. Electric field and potential distributions [1975]
Đurić, Zoran G.
; Smiljanić, Miloljub
On the design of tunable quantum well infrared photodetectors [1988]
Z. Ikonić; V. Milanović; D. TjapkinOptical emission diagnostics of etching of low-k dielectrics in a two frequency inductively coupled plasma [2007]
Miyauchi, M; Miyoshi, Y; Petrovic, Zoran Lj 
; Makabe, Toshiaki
Non-quasi-static physics-based circuit model of fully-depleted double-gate SOI MOSFET [2005]
Jankovic, Nebojsa D; Pesic, Tatjana Vp-n transition capacitance [1971]
Đurić, Zoran G.; Smiljanić, Miloljub; Tjapkin, D.
Influence of carriers on the capacitance of p-n junctions with deep donors [1974]
Smiljanić, Miloljub; Tjapkin, D.; Đurić, Zoran G.
Electron ground state in the semiconductor inversion layer and low frequency MIS capacitance [1976]
Đurić, Zoran G.; Spasojević, Ž.; Tjapkin, Dimitrije A.
Impact of parameter extraction methodology on variances of extracted parameter values [2010]
Milovanović, Vladimir ; van, der Toorn Ramses
Static characteristics of the metal-insulator-semiconductor- insulator-metal (MISIM) structure—II. Low frequency capacitance [1975]
Đurić, Zoran G.; Smiljanić, Miloljub; Tjapkin, D.
Repeating of positive and negative high electric field stress and corresponding thermal post-stress annealing of the n-channel power VDMOSFETs [2008]
Aleksic, Sanja M ; Jaksic, Aleksandar B; Pejovic, Momcilo M
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