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Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon [2019]
Balakshin, Yu. V.; Kozhemiako, A. V.; Petrović, Srđan M.



Structure of DX-like centers in narrow-band IV–VI semiconductors doped with group-III elements
[1998]
Ivanchik, I.I.; Khokhlov, D.R.; Belogorokhov, A.I.; Popović, Z.; Romćević, N. 

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