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First principle electronic structure calculations of transition metal–doped CdTe–based semiconductors
| Title: | First principle electronic structure calculations of transition metal–doped CdTe–based semiconductors | Authors: | Radisavljević, Ivana M. |
Issue Date: | 2018 | Publication: | 3rd International Symposium on Materials for Energy Storage and Conversion, | Publisher: | Beograd, Srbija | Type: | Conference Paper | ISBN: | 978–86–7306–140–5 ИСБН није валидан Search Idenfier |
Collation: | str. 105-105 | URI: | https://enauka.gov.rs/handle/123456789/292980 | URL: | https://www.vin.bg.ac.rs/mesc2018/ | Metadata source: | Migrirano iz RIS podataka | M-category: | Mp. category will be shown later |
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