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The effects induced by the gamma-ray responsible for the threshold voltage shift of commercial p-channel power VDMOSFET
| Title: | The effects induced by the gamma-ray responsible for the threshold voltage shift of commercial p-channel power VDMOSFET | Authors: | Obrenović, Marija D.   ; Pejović, Milić M. ; Lazarević, Đorđe R. ; Kartalović, Nenad M. |
Issue Date: | 2018 | Publication: | Nuclear Technology and Radiation Protection | ISSN: | 1451-3994 Nuclear technology and radiation protection Search Idenfier |
Type: | Article | Collation: | vol. 33 br. 1 str. 81-86 | DOI: | 10.2298/NTRP1801081O | WoS-ID: | 000436369300009 | Scopus-ID: | 2-s2.0-85051457066 | URI: | https://vinar.vin.bg.ac.rs/handle/123456789/7784 http://www.doiserbia.nb.rs/Article.aspx?ID=1451-39941801081O https://enauka.gov.rs/handle/123456789/393095 |
URL: | http://www.doiserbia.nb.rs/Article.aspx?ID=1451-39941801081O | Project: | Fizički i funkcionalni efekti interakcije zračenja sa elektrotehničkim i biološkim sistemima (RS-171007) | M-category: | 23M23 |
