Results

eNauka >  Rezultati >  Three-dimensional potential distribution model in channel of small geometry MOSFET with gauss impurity distribution
Naziv: Three-dimensional potential distribution model in channel of small geometry MOSFET with gauss impurity distribution
Autori: Ramović, Rifat M.; Krijestorac, S; Lukić, Petar  
Godina: 2004
Publikacija: Proceedings of the International Conference on Microelectronics
Izdavač: Institute of Electrical and Electronics Engineers Inc.
Tip rezultata: Konferencijski rad
Kolacija: vol. 24 I str. 307-310
WoS-ID: 000222219300060
Scopus-ID: 2-s2.0-3142777697
URI: https://machinery.mas.bg.ac.rs/handle/123456789/398
https://enauka.gov.rs/handle/123456789/572735
M-kategorija: 
Mp kategorija će biti prikazana naknadno.

1
SCOPUSTM

Find the DOI


Google ScholarTM

Items in eNauka are protected by copyright, with all rights reserved, unless otherwise indicated.