Results
| Naziv: | GaN HEMT Modeling versus Bias Point and Gate Width | Autori: | Crupi, Giovanni; Latino, Mariangela; Gugliandolo, Giovanni; Marinkovic, Zlatica D   ; Cai, Jialin; Fazio, Enza; Donato, Nicola |
Godina: | 2023 | Publikacija: | 2023 58TH INTERNATIONAL SCIENTIFIC CONFERENCE ON INFORMATION, COMMUNICATION AND ENERGY SYSTEMS AND TECHNOLOGIES, ICEST | Tip rezultata: | Konferencijski rad | Kolacija: | str. 211-214 | DOI: | 10.1109/ICEST58410.2023.10187364 | WoS-ID: | 001042213500044 | Scopus-ID: | 2-s2.0-85167868017 | URI: | https://enauka.gov.rs/handle/123456789/808007 | Projekat: | GaN4AP (GaN for Advanced Power Applications) project [CUP: B82C21001520008] Ministry of Science, Technological Development and Innovations of the Republic of Serbia |
Izvor metapodataka: | (Preuzeto iz Nasi u WoS) | M-kategorija: | Mp kategorija će biti prikazana naknadno. |
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