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A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements (Invited Paper)
| Title: | A Comprehensive Overview of the Temperature-Dependent Modeling of the High-Power GaN HEMT Technology Using mm-Wave Scattering Parameter Measurements (Invited Paper) | Authors: | Crupi, Giovanni; Latino, Mariangela; Gugliandolo, Giovanni; Marinkovic, Zlatica D   ; Cai, Jialin; Bosi, Gianni; Raffo, Antonio; Fazio, Enza; Donato, Nicola |
Issue Date: | 2023 | Publication: | ELECTRONICS | ISSN: | 2079-9292 Electronics (Basel) Search Idenfier |
Type: | Article | Collation: | vol. 12 br. 8 str. 1771-1771 | DOI: | 10.3390/electronics12081771 | WoS-ID: | 000978663400001 | Scopus-ID: | 2-s2.0-85156193280 | URI: | https://enauka.gov.rs/handle/123456789/809186 | Project: | Italian Ministry of University and Research (MUR) through the PRIN [2017FL8C9N] Ministry of Science, Technological Development and Innovations of the Republic of Serbia GaN4AP (GaN for Advanced Power Applications) project [CUP: B82C21001520008] |
Metadata source: | (Preuzeto iz Nasi u WoS) | M-category: | 22M22 |
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