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Physico-chemical processes in metal-oxide-semiconductor transistors with thick gate oxide during high electric field stress
| Naziv: | Physico-chemical processes in metal-oxide-semiconductor transistors with thick gate oxide during high electric field stress | Autori: | Ristic, Goran S |
Godina: | 2007 | Publikacija: | JOURNAL OF NON-CRYSTALLINE SOLIDS | ISSN: | 0022-3093 Journal of Non-crystalline Solids Pretraži identifikator |
Tip rezultata: | Naučni članak | Kolacija: | vol. 353 br. 2 str. 170-179 | DOI: | 10.1016/j.jnoncrysol.2006.09.020 | WoS-ID: | 000243821700009 | Scopus-ID: | 2-s2.0-33845711963 | URI: | https://enauka.gov.rs/handle/123456789/810530 | Izvor metapodataka: | (Preuzeto iz Nasi u WoS) | M-kategorija: | 21aM21a - Vodeći međunarodni časopis kategorije M21a |
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