Претрага
Резултати
Anisotropy in thermal and electronic properties of single crystal GeSe 2 obtained by the photoacoustic method
[1998]
Nikolić, Pantelija; Todorović, Dragan; Vujatović, Stevan; Đurić, S.; Mihailović, P.; Blagojević, Vladimir; Radulović, Katarina 
; Bojičić, A.; Vasiljević-Radović, Dana ; Elazar, Jovan;
Urošević, Dragan ;
; Boltzmann Equation Analysis of Electron Transport in a N$_{2}$–O$_{2}$ Streamer Discharge [2011]
Dujko, Saša ; Ebert, Ute; White, Ronald D.; Petrović, Zoran
Experimental and first-principles studies of high-pressure effects on the structural, electronic, and optical properties of semiconductors and lanthanide doped solids
[2017]
Brik, M.G. ; Mahlik, S.; Jankowski, D.; Strak, P.; Korona, K.P.; Monroy, E.; Krukowski, S.; Kaminska, A.
Effects of consecutive irradiation and bias temperature stress in p-channel power vertical double-diffused metal oxide semiconductor transistors
[2018]
Davidović, Vojkan ; Danković, Danijel ; Ilić, Aleksandar; Manić, Ivica ; Golubović, Snežana ; Đorić-Veljković, Snežana ; Prijić, Zoran ; Prijić, Aneta ; Stojadinović, Ninoslav
Radioactive reliability of programmable memories
[2001]
Lončar, Boris B. ; Osmokrović, Predrag; Stojanović, M.; Stanković, Srboljub J.
Transitions between Glow and Arc Modes and Its Influences to the Performance of a Hollow-Cathode Discharge CO2 Laser
[1995]
Ivković, Milivoje ; Nikola Konjević
Formative Time Determination in Nitrogen-Filled Tube Using Statistical Methods
[1995]
Pejović, Momčilo ; Živković, Jasmina; Milosavljević, Čedomir ; Ristić, Goran
Annealing influence on recovery of electrically stressed power vertical double-diffused metal oxide semiconductor transistors
[2015]
Đorić-Veljković, Snežana ; Manić, Ivica ; Davidović, Vojkan ; Danković, Danijel ; Golubović, Snežana ; Stojadinović, Ninoslav
Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy [2013]
Abood, Imhimmad; Šašić, Rajko ; Ostojić, Stanko M.; Lukić, Petar M.
Calculations of complete 4f<sup>n</sup> and 4f<sup>n-1</sup>5d<sup>1</sup> energy level schemes of free trivalent rare-earth ions
[2004]
Ogasawara, K.; Watanabe, S.; Sakai, Y.; Toyoshima, H.; Ishii, T.; Brik, M.G. ; Tanaka, I.
Филтери
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