Претрага
Резултати
Experimental and first-principles studies of high-pressure effects on the structural, electronic, and optical properties of semiconductors and lanthanide doped solids
[2017]
Brik, M.G. 
; Mahlik, S.; Jankowski, D.; Strak, P.; Korona, K.P.; Monroy, E.; Krukowski, S.; Kaminska, A.
Radioactive reliability of programmable memories
[2001]
Lončar, Boris B. ; Osmokrović, Predrag; Stojanović, M.; Stanković, Srboljub J.
Effects of consecutive irradiation and bias temperature stress in p-channel power vertical double-diffused metal oxide semiconductor transistors
[2018]
Davidović, Vojkan ; Danković, Danijel ; Ilić, Aleksandar; Manić, Ivica ; Golubović, Snežana ; Đorić-Veljković, Snežana ; Prijić, Zoran ; Prijić, Aneta ; Stojadinović, Ninoslav
Formative Time Determination in Nitrogen-Filled Tube Using Statistical Methods
[1995]
Pejović, Momčilo ; Živković, Jasmina; Milosavljević, Čedomir ; Ristić, Goran
Transitions between Glow and Arc Modes and Its Influences to the Performance of a Hollow-Cathode Discharge CO2 Laser
[1995]
Ivković, Milivoje ; Nikola Konjević
Possibility of prompt U-238 activity concentration determination by gamma-ray spectroscopy [2005]
Bikit Ištvan; Mrđa Dušan ; Todorović Nataša ; Varga Ervin; Forkapić Sofija ; Vesković Miroslav; Slivka Jaroslav; Conkic Ljiljana
Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy [2013]
Abood, Imhimmad; Šašić, Rajko ; Ostojić, Stanko M.; Lukić, Petar M.
Simple Method for Depleted Uranium Determination [2003]
Bikit Ištvan; Slivka Jaroslav; Mrđa Dušan ; Todorović Nataša ; Ćurčić S ; Varga Ervin; Vesković Miroslav; Conkic Ljiljana; Forkapić Sofija
Radiography Simulation Based on Exposure Buildup Factors for Multilayer Structures [2009]
Marinković, Predrag; Pešić, Milan P.Calculations of complete 4f<sup>n</sup> and 4f<sup>n-1</sup>5d<sup>1</sup> energy level schemes of free trivalent rare-earth ions
[2004]
Ogasawara, K.; Watanabe, S.; Sakai, Y.; Toyoshima, H.; Ishii, T.; Brik, M.G. ; Tanaka, I.
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