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Резултати

C–V profiling of ultra-shallow junctions using step-like background profiles   [2010]

Popadić, Miloš; Milovanović, Vladimir  ; Xu, Cuiqin; Sarubbi, Francesco; Nanver, Lis K.

Compact model of the IGBTs with localized lifetime control dedicated to power circuit simulations   [2010]

Janković, Nebojša ; Igic, Petar; Sakurai, Naoki

The application of Ramo's theorem to the impulse response calculation of a reach-through avalanche photodiode   [1984]

Đurić, Zoran G. ; Smiljanić, Miloljub; Radjenović, Branislav  

Static characteristics of metal-insulator-semiconductor-insulator-metal (MISIM) structures-I. Electric field and potential distributions   [1975]

Đurić, Zoran G. ; Smiljanić, Miloljub

Non-quasi-static physics-based circuit model of fully-depleted double-gate SOI MOSFET   [2005]

Jankovic, Nebojsa D; Pesic, Tatjana V

On the design of tunable quantum well infrared photodetectors   [1988]

Z. Ikonić; V. Milanović; D. Tjapkin

Impact of parameter extraction methodology on variances of extracted parameter values   [2010]

Milovanović, Vladimir  ; van, der Toorn Ramses

Electron ground state in the semiconductor inversion layer and low frequency MIS capacitance   [1976]

Đurić, Zoran G. ; Spasojević, Ž.; Tjapkin, Dimitrije A.

Optical emission diagnostics of etching of low-k dielectrics in a two frequency inductively coupled plasma   [2007]

Miyauchi, M; Miyoshi, Y; Petrovic, Zoran Lj; Makabe, Toshiaki

Repeating of positive and negative high electric field stress and corresponding thermal post-stress annealing of the n-channel power VDMOSFETs   [2008]

Aleksic, Sanja M  ; Jaksic, Aleksandar B; Pejovic, Momcilo M

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