N-type silicon electron mobility and its relationship to the kink effect for nano-scaled SOI NMOS devices

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Naziv:	N-type silicon electron mobility and its relationship to the kink effect for nano-scaled SOI NMOS devices
Autori:	Sarajlić, Milija ; Ramović, R.
Godina:	2007
Publikacija:	Materials Science Forum
ISSN:	0255-5476 Materials Science Forum Pretraži identifikator
Tip rezultata:	Konferencijski rad
Kolacija:	vol. 555 str. 153-158
DOI:	10.4028/www.scientific.net/MSF.555.153
WoS-ID:	000249653700024
Scopus-ID:	2-s2.0-38349078602
URI:	https://cer.ihtm.bg.ac.rs/handle/123456789/347 https://enauka.gov.rs/handle/123456789/202458
M-kategorija:	Mp kategorija će biti prikazana naknadno.

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