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Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy
| Title: | Analytical Model for Drift Region Voltage Drop in 4H-SiC Vertical Double Implanted Metal Oxide Semiconductor Field Effect Transistor: Effect of Anisotropy | Authors: | Abood, Imhimmad; Šašić, Rajko   ; Ostojić, Stanko M.; Lukić, Petar M. |
Issue Date: | 2013 | Publication: | Japanese Journal of Applied Physics | ISSN: | 0021-4922 Japanese Journal of Applied Physics Search Idenfier |
Publisher: | IOP Publishing Ltd, Bristol | Type: | Article | Collation: | vol. 52 br. 9 str. 094302-094302 | DOI: | 10.7567/JJAP.52.094302 | WoS-ID: | 000323884300028 | Scopus-ID: | 2-s2.0-84883889999 | URI: | https://enauka.gov.rs/handle/123456789/255078 https://machinery.mas.bg.ac.rs/handle/123456789/1673 http://TechnoRep.tmf.bg.ac.rs/handle/123456789/2396 |
Project: | Optoelektronski nanodimenzioni sistemi - put ka primeni (RS-45003) | M-category: | 22M22 |
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