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Effects of consecutive irradiation and bias temperature stress in p-channel power vertical double-diffused metal oxide semiconductor transistors
| Naziv: | Effects of consecutive irradiation and bias temperature stress in p-channel power vertical double-diffused metal oxide semiconductor transistors | Autori: | Davidović, Vojkan   ; Danković, Danijel ; Ilić, Aleksandar; Manić, Ivica ; Golubović, Snežana ; Đorić-Veljković, Snežana ; Prijić, Zoran ; Prijić, Aneta ; Stojadinović, Ninoslav |
Godina: | 2018 | Publikacija: | JAPANESE JOURNAL OF APPLIED PHYSICS | ISSN: | 0021-4922 Japanese Journal of Applied Physics Pretraži identifikator |
Izdavač: | Japan : Institute of Pure and Applied Physics | Tip rezultata: | Naučni članak | Kolacija: | vol. 57 br. 4 str. 044101-044101 | DOI: | 10.7567/jjap.57.044101 | WoS-ID: | 000426931900001 | Scopus-ID: | 2-s2.0-85044411052 | URI: | https://enauka.gov.rs/handle/123456789/283086 | Projekat: | Serbian Academy of Sciences and Arts (SASA) [F-148] Ministry of Education, Science and Technological Development of the Republic of Serbia [TR32026, OI171026] |
Izvor metapodataka: | Migracija | M-kategorija: | 22M22 - Međunarodni časopis kategorije M22 |
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