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Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals
| Naziv: | Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals | Autori: | Erich, Marko   ; Petrović, Srđan M. ; Kokkoris, Michael; Lagoyannis, A.; Paneta, Valentina; Harissopulos, S.; Telečki, Igor N. |
Godina: | 2012 | Publikacija: | Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms | ISSN: | 0168-583X Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms Pretraži identifikator1872-9584 Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms Pretraži identifikator |
Tip rezultata: | Naučni članak | Kolacija: | vol. 274 str. 87-92 | DOI: | 10.1016/j.nimb.2011.12.008 | WoS-ID: | 000301611900011 | Scopus-ID: | 2-s2.0-84855171283 | URI: | https://vinar.vin.bg.ac.rs/handle/123456789/4749 https://enauka.gov.rs/handle/123456789/310301 |
Projekat: | SPIRIT - Support of Public and Industrial Research using Ion Beam Technology (EU-227012) Fizika i hemija sa jonskim snopovima (RS-45006) |
M-kategorija: | 21M21 - Vodeći međunarodni časopis kategorije M21 |
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