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eNauka >  Rezultati >  Sub-sircuit model of fully-depleted double-gate FinFET including the effects of oxide and interface trapped charge
Naziv: Sub-sircuit model of fully-depleted double-gate FinFET including the effects of oxide and interface trapped charge
Autori: Pesic-Brdjanin, Tatjana; Janković, Nebojša 
Godina: 2015
Publikacija: IEEE EUROCON 2015 - INTERNATIONAL CONFERENCE ON COMPUTER AS A TOOL (EUROCON)
Tip rezultata: Konferencijski rad
Kolacija: str. 273-276
DOI: 10.1109/eurocon.2015.7313741
WoS-ID: 000380463400078
Scopus-ID: 2-s2.0-84961751355
URI: https://enauka.gov.rs/handle/123456789/365096
Izvor metapodataka: Migracija
M-kategorija: 
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