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Negative bias temperature instability in p-channel power VDMOSFETs: recoverable versus permanent degradation
| Naziv: | Negative bias temperature instability in p-channel power VDMOSFETs: recoverable versus permanent degradation | Autori: | Danković, Danijel |
Godina: | 2015 | Publikacija: | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | ISSN: | 0268-1242 Semiconductor Science and Technology Pretraži identifikator |
Izdavač: | United Kingdom : IOP Publishing | Tip rezultata: | Naučni članak | Kolacija: | vol. 30 br. 10 str. 105009-105009 | DOI: | 10.1088/0268-1242/30/10/105009 | WoS-ID: | 000362602300017 | Scopus-ID: | 2-s2.0-84945156573 | URI: | https://enauka.gov.rs/handle/123456789/446247 | Projekat: | Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026] | Izvor metapodataka: | Migracija | M-kategorija: | 21M21 - Vodeći međunarodni časopis kategorije M21 |
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