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Investigation of the 4 MeV C and Si ion channeling implantation influence on the structure of 6H-SiC monocrystal
| Title: | Investigation of the 4 MeV C and Si ion channeling implantation influence on the structure of 6H-SiC monocrystal | Authors: | Gloginjić, Marko P.   ; Srdjan Petrović; Marko Erich; Aikaterini Flessa; Eleni Ntemou; Michael Kokkoris; Efthymios Liarokapis; Stjepko Fazinić; Marko Karlušić; Kristina Tomić |
Issue Date: | 2019 | Publication: | Eighteenth Young Researchers' Conference Materials Sciences and Engineering, December 4-6, 2019, Belgrade | Publisher: | Belgrade : Institute of Technical Sciences of SASA | Type: | Conference Paper | ISBN: | 978-86-80321-35-6  Search Idenfier |
URI: | https://enauka.gov.rs/handle/123456789/478032 | Metadata source: | Migrirano iz RIS podataka | M-category: | Mp. category will be shown later |
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