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4H-SiC vertical double implanted metal-oxide-semiconductor drift region-energy aspects of its formation and analysis
| Title: | 4H-SiC vertical double implanted metal-oxide-semiconductor drift region-energy aspects of its formation and analysis | Authors: | Alkhem, Abdel; Šašić, Rajko   ; Lukić, Petar M. ; Ostojić, Stanko M. |
Issue Date: | 2014 | Publication: | Physica Scripta | ISSN: | 0031-8949 Physica Scripta Search Idenfier |
Publisher: | IOP Publishing Ltd, Bristol | Type: | Article | Collation: | vol. 89 br. 1 str. 015803-015803 | DOI: | 10.1088/0031-8949/89/01/015803 | WoS-ID: | 000329323200018 | Scopus-ID: | 2-s2.0-84891865743 | URI: | https://machinery.mas.bg.ac.rs/handle/123456789/1995 https://enauka.gov.rs/handle/123456789/481328 http://TechnoRep.tmf.bg.ac.rs/handle/123456789/2781 |
Project: | Optoelektronski nanodimenzioni sistemi - put ka primeni (RS-45003) | M-category: | 22M22 |
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