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Effect of fluorination and hydrogenation by ion implantation on reliability of poly-Si TFTs under gamma irradiation
| Title: | Effect of fluorination and hydrogenation by ion implantation on reliability of poly-Si TFTs under gamma irradiation | Authors: | Jelenković, Emil V; Ristić, Goran |
Issue Date: | 2010 | Publication: | Journal of Physics D: Applied Physics | ISSN: | 0022-3727 Journal of Physics. D: Applied Physics Search Idenfier |
Type: | Article | Collation: | vol. 44 br. 1 str. 015101-015101 | DOI: | 10.1088/0022-3727/44/1/015101 | WoS-ID: | 000285147400005 | Scopus-ID: | 2-s2.0-78650651604 | URI: | https://enauka.gov.rs/handle/123456789/507197 | Metadata source: | Migrirano iz RIS podataka | M-category: | 21M21 |
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