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Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon
| Naziv: | Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon | Autori: | Balakshin, Yu. V.; Kozhemiako, A. V.; Petrović, Srđan M.   ; Erich, Marko ; Shemukhin, Andrey A.; Chernysh, Vladimir S. |
Godina: | 2019 | Publikacija: | Semiconductors | ISSN: | 1063-7826 Semiconductors Pretraži identifikator |
Tip rezultata: | Naučni članak | Kolacija: | vol. 53 br. 8 str. 1011-1017 | DOI: | 10.1134/S1063782619080062 | WoS-ID: | 000479255400002 | Scopus-ID: | 2-s2.0-85070469404 | URI: | https://enauka.gov.rs/handle/123456789/540072 https://vinar.vin.bg.ac.rs/handle/123456789/8436 |
Projekat: | Russian Foundation for Basic Research (RFBR) [18-32-00833mol_a] Fizika i hemija sa jonskim snopovima (RS-45006) |
M-kategorija: | 23M23 - Međunarodni časopis kategorije M23 |
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