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eNauka >  Rezultati >  The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy(Si)
Naziv: The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy(Si)
Autori: Ristic, Goran S.  ; Vasovic, Nikola D.; Kovačević, Milojko; Jaksic, Aleksandar B.
Godina: 2011
Publikacija: Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
ISSN: 0168-583X Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms Pretraži identifikator
1872-9584 Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms Pretraži identifikator
Tip rezultata: Naučni članak
Kolacija: vol. 269 br. 23 str. 2703-2708
DOI: 10.1016/j.nimb.2011.08.015
WoS-ID: 000298072000002
Scopus-ID: 2-s2.0-80053172815
URI: https://vinar.vin.bg.ac.rs/handle/123456789/4608
https://enauka.gov.rs/handle/123456789/549606
Projekat: Joint research on various types of radiation dosimeters (EU-207122)
Zajednička istraživanja merenja i uticaja jonizujućeg i UV zračenja u oblasti medicine i zaštite životne sredine (RS-43011)
M-kategorija: 
21M21 - Vodeći međunarodni časopis kategorije M21

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