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eNauka >  Rezultati >  An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs
Naziv: An Improvement of Analytical I-V Model for Surrounding-Gate MOSFETs
Autori: Alkoash, Abed Alkhem; Šašić, Rajko  ; Ostojić, Stanko M.; Lukić, Petar M.  
Godina: 2011
Publikacija: Journal of Computational and Theoretical Nanoscience
ISSN: 1546-1955 Journal of Computational and Theoretical Nanoscience Pretraži identifikator
Izdavač: Amer Scientific Publishers, Stevenson Ranch
Tip rezultata: Naučni članak
Kolacija: vol. 8 br. 1 str. 47-50
DOI: 10.1166/jctn.2011.1657
WoS-ID: 000289698000009
Scopus-ID: 2-s2.0-84856923235
URI: https://enauka.gov.rs/handle/123456789/556038
http://TechnoRep.tmf.bg.ac.rs/handle/123456789/1956
https://machinery.mas.bg.ac.rs/handle/123456789/1153
Projekat: Serbian Ministry of Science and Technological Development
M-kategorija: 
22M22 - Međunarodni časopis kategorije M22

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