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| Title: | Modeling of NBTS Effects in P-Channel Power VDMOSFETs | Authors: | Danković, Danijel   ; Mitrović, Nikola ; Prijić, Zoran ; Stojadinović, Ninoslav D. |
Issue Date: | 2020 | Publication: | IEEE Transactions on Device and Materials Reliability | ISSN: | 1530-4388 IEEE Transactions on Device and Materials Reliability Search Idenfier |
Publisher: | Institute of Electrical and Electronics Engineers ({IEEE}) | Type: | Article | Collation: | vol. 20 br. 1 str. 204-213 | DOI: | 10.1109/TDMR.2020.2974131 | WoS-ID: | 000526525700026 | Scopus-ID: | 2-s2.0-85079678670 | URI: | https://enauka.gov.rs/handle/123456789/776668 | URL: | https://doi.org/10.1109/TDMR.2020.2974131 | Project: | Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026] Serbian Academy of Sciences and Arts [F-148] |
Metadata source: | (Preuzeto iz ORCID-a) Mitrovic, Nikola | M-category: | 22M22 |
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