Results
| Naziv: | Modeling of NBTS Effects in P-Channel Power VDMOSFETs | Autori: | Danković, Danijel |
Godina: | 2020 | Publikacija: | IEEE Transactions on Device and Materials Reliability | ISSN: | 1530-4388 IEEE Transactions on Device and Materials Reliability Pretraži identifikator |
Izdavač: | Institute of Electrical and Electronics Engineers ({IEEE}) | Tip rezultata: | Naučni članak | Kolacija: | vol. 20 br. 1 str. 204-213 | DOI: | 10.1109/TDMR.2020.2974131 | WoS-ID: | 000526525700026 | Scopus-ID: | 2-s2.0-85079678670 | URI: | https://enauka.gov.rs/handle/123456789/776668 | URL: | https://doi.org/10.1109/TDMR.2020.2974131 | Projekat: | Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026] Serbian Academy of Sciences and Arts [F-148] |
Izvor metapodataka: | (Preuzeto iz ORCID-a) Mitrovic, Nikola | M-kategorija: | 22M22 - Međunarodni časopis kategorije M22 |
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