Results

eNauka >  Rezultati >  Modeling of NBTS Effects in P-Channel Power VDMOSFETs
Naziv: Modeling of NBTS Effects in P-Channel Power VDMOSFETs
Autori: Danković, Danijel  ; Mitrović, Nikola  ; Prijić, Zoran  ; Stojadinović, Ninoslav D. 
Godina: 2020
Publikacija: IEEE Transactions on Device and Materials Reliability
ISSN: 1530-4388 IEEE Transactions on Device and Materials Reliability Pretraži identifikator
Izdavač: Institute of Electrical and Electronics Engineers ({IEEE})
Tip rezultata: Naučni članak
Kolacija: vol. 20 br. 1 str. 204-213
DOI: 10.1109/TDMR.2020.2974131
WoS-ID: 000526525700026
Scopus-ID: 2-s2.0-85079678670
URI: https://enauka.gov.rs/handle/123456789/776668
URL: https://doi.org/10.1109/TDMR.2020.2974131
Projekat: Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026]
Serbian Academy of Sciences and Arts [F-148]
Izvor metapodataka: (Preuzeto iz ORCID-a) Mitrovic, Nikola
M-kategorija: 
22M22 - Međunarodni časopis kategorije M22

29
SCOPUSTM
17
OpenCitations
25
WEB OF SCIENCETM
Altmetric
Dimensions
Unpaywall

Items in eNauka are protected by copyright, with all rights reserved, unless otherwise indicated.