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Radiation and Spontaneous Annealing of Radiation-sensitive Field-effect Transistors with Gate Oxide Thicknesses of 400 and 1000 nm
| Title: | Radiation and Spontaneous Annealing of Radiation-sensitive Field-effect Transistors with Gate Oxide Thicknesses of 400 and 1000 nm | Authors: | Ristic, Goran S   ; Andjelkovic, Marko S; Duane, Russell; Palma, Alberto J; Jaksic, Aleksandar B |
Issue Date: | 2021 | Publication: | SENSORS AND MATERIALS | ISSN: | 0914-4935 Sensors and Materials Search Idenfier |
Type: | Article | Collation: | vol. 33 br. 6 str. 2109-2109 | DOI: | 10.18494/SAM.2021.3425 | WoS-ID: | 000663933500005 | Scopus-ID: | 2-s2.0-85125488126 | URI: | https://enauka.gov.rs/handle/123456789/805497 | Project: | European Union's Horizon 2020 research and innovation programme [857558] Ministry of Education, Science and Technological Development, Serbia [43011] |
Metadata source: | (Preuzeto iz Nasi u WoS) | M-category: | 23M23 |
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