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Comparative analysis of the DC performance of DG MOSFETs on highly-doped and near-intrinsic silicon layers
| Naziv: | Comparative analysis of the DC performance of DG MOSFETs on highly-doped and near-intrinsic silicon layers | Autori: | Jankovic, Nebojsa D; Armstrong, GA | Godina: | 2004 | Publikacija: | MICROELECTRONICS JOURNAL | ISSN: | 0026-2692 Microelectronics Journal Pretraži identifikator |
Tip rezultata: | Naučni članak | Kolacija: | vol. 35 br. 8 str. 647-653 | DOI: | 10.1016/j.mejo.2004.04.007 | WoS-ID: | 000222860000004 | Scopus-ID: | 2-s2.0-2942735504 | URI: | https://enauka.gov.rs/handle/123456789/813340 | Izvor metapodataka: | (Preuzeto iz Nasi u WoS) | M-kategorija: | 22M22 - Međunarodni časopis kategorije M22 |
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