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eNauka >  Results >  An analytical model of the inverse base width modulation effect in SiGe graded heterojunction bipolar transistors
Title: An analytical model of the inverse base width modulation effect in SiGe graded heterojunction bipolar transistors
Authors: Pesic, Tatjana V; Jankovic, Nebojsa D
Issue Date: 2001
Publication: MICROELECTRONICS JOURNAL
ISSN: 0026-2692 Microelectronics Journal Search Idenfier
Type: Article
Collation: vol. 32 br. 9 str. 713-718
DOI: 10.1016/S0026-2692(01)00057-X
WoS-ID: 000170408900002
Scopus-ID: 2-s2.0-0035452352
URI: https://enauka.gov.rs/handle/123456789/816521
Metadata source: (Preuzeto iz Nasi u WoS)
M-category: 
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