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Modeling of gamma-irradiation and lowered temperature effects in power vertical double-diffused metal-oxide-semiconductor transistors (Erratum - errors in Authors - vol 38, pg 4699, 1999)
| Naziv: | Modeling of gamma-irradiation and lowered temperature effects in power vertical double-diffused metal-oxide-semiconductor transistors <font color='#0066ff'><strong>(Erratum - errors in Authors - vol 38, pg 4699, 1999)</strong></font> | Autori: | Stojadinovic, Ninoslav D; Golubovic, Snezana M; Djoric-Veljkovic, Snezana M; Davidovic, Vojkan S   |
Godina: | 2001 | Publikacija: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | ISSN: | 0021-4922 Japanese Journal of Applied Physics Pretraži identifikator |
Tip rezultata: | Ostalo | Kolacija: | vol. 40 br. 3R str. 1530-1530 | DOI: | 10.1143/JJAP.40.1530 | WoS-ID: | 000170771500079 | Scopus-ID: | 2-s2.0-0035271093 | URI: | https://enauka.gov.rs/handle/123456789/822177 | Izvor metapodataka: | (Preuzeto iz Nasi u WoS) | M-kategorija: | Mp kategorija će biti prikazana naknadno. |
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