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Properties of latent interface-trap buildup in irradiated metal-oxide-semiconductor transistors determined by switched bias isothermal annealing experiments
| Naziv: | Properties of latent interface-trap buildup in irradiated metal-oxide-semiconductor transistors determined by switched bias isothermal annealing experiments | Autori: | Jaksic, Aleksandar B; Pejovic, Momcilo M; Ristic, Goran S   |
Godina: | 2000 | Publikacija: | APPLIED PHYSICS LETTERS | ISSN: | 0003-6951 Applied Physics Letters Pretraži identifikator |
Tip rezultata: | Naučni članak | Kolacija: | vol. 77 br. 25 str. 4220-4222 | DOI: | 10.1063/1.1336159 | WoS-ID: | 000165824200047 | Scopus-ID: | 2-s2.0-0346930594 | URI: | https://enauka.gov.rs/handle/123456789/825449 | Izvor metapodataka: | (Preuzeto iz Nasi u WoS) | M-kategorija: | 21a+M21a+ - Vodeći međunarodni časopis kategorije M21a+ |
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