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eNauka >  Rezultati >  Stability of submicron AlGaN/GaN HEMT devices irradiated by gamma rays
Naziv: Stability of submicron AlGaN/GaN HEMT devices irradiated by gamma rays
Autori: Jha, Shrawan K; Jelenkovic, Emil V; Pejovic, Milic M  ; Ristic, Goran S  ; Pejovic, Momcilo M; Tong, KY; Surya, C; Bello, I; Zhang, WJ
Godina: 2009
Publikacija: MICROELECTRONIC ENGINEERING
ISSN: 0167-9317 Microelectronic Engineering Pretraži identifikator
Tip rezultata: Naučni članak
Kolacija: vol. 86 br. 1 str. 37-40
DOI: 10.1016/j.mee.2008.09.001
WoS-ID: 000263021500007
Scopus-ID: 2-s2.0-57149084856
URI: https://enauka.gov.rs/handle/123456789/827536
Projekat: Research Grant Council of Hong Kong [CityU 123607, PolyU 5236/04E]
Ministry of the Science of the Republic of Serbia [141008B]
Izvor metapodataka: (Preuzeto iz Nasi u WoS)
M-kategorija: 
21M21 - Vodeći međunarodni časopis kategorije M21

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