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eNauka >  Results >  Interband transitions of quantum wells and device structures containing Ga(N, As) and (Ga, In)(N, As)
Title: Interband transitions of quantum wells and device structures containing Ga(N, As) and (Ga, In)(N, As)
Authors: Klar, P J; Gr ning, H; Heimbrodt, W; Weiser, G; Koch, J; Volz, K; Stolz, W; Koch, S W; Tomić, Stanko  ; Choulis, S A;
Hosea, T J C; O Reilly, E P; Hofmann, M; Hader, J; Moloney, J V;
Issue Date: 2002
Publication: Semiconductor Science and Technology
ISSN: 0268-1242 Semiconductor Science and Technology Search Idenfier
Type: Article
Collation: vol. 17 br. 8 str. 830-842
DOI: 10.1088/0268-1242/17/8/312
WoS-ID: 000177736100012
Scopus-ID: 2-s2.0-0036684853
URI: https://enauka.gov.rs/handle/123456789/851230
Metadata source: (Preuzeto iz CrossRef-a) Tomić, Stanko
M-category: 
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