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Temperature and gate bias effects on gamma-irradiated Al-gate metal-oxide-semiconductor transistors
| Naziv: | Temperature and gate bias effects on gamma-irradiated Al-gate metal-oxide-semiconductor transistors | Autori  : | Pejović, Momčilo  ; Golubović, Snežana ; Ristić, Goran  ; Odalović, Milan |
Godina: | 1994 | Publikacija: | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | ISSN: | 0021-4922 Japanese Journal of Applied Physics Pretraži identifikator |
Tip rezultata: | Naučni članak | Kolacija: | vol. 33 br. 2 str. 986-990 | DOI: | 10.1143/jjap.33.986 | Scopus-ID: | 2-s2.0-0028378981 | URI: | https://enauka.gov.rs/handle/123456789/881634 | Izvor metapodataka: | (Preuzeto iz ORCID-a) Ristić, Goran | M-kategorija: | 21M21 - Vodeći međunarodni časopis kategorije M21 |
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