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Thermal annealing induced recovery of the VT of irradiated commercial MOS transistors
| Title: | Thermal annealing induced recovery of the VT of irradiated commercial MOS transistors | Authors: | Mitrović, Nikola   ; Guirado, Damian; Danković, Danijel ; Palma, Alberto; Ristić, Goran ; Carvajal, Miguel |
Issue Date: | 2024 | Publication: | Journal of Circuits, Systems and Computers | ISSN: | 0218-1266 Journal of Circuits Systems and Computers Search Idenfier |
Type: | Article | DOI: | 10.1142/S0218126625410026 | WoS-ID: | 001373246200001 | Scopus-ID: | 2-s2.0-85211992212 | URI: | https://enauka.gov.rs/handle/123456789/942148 | Project: | ELICSIR - Enhancement of Sceintific Excellence and Innovation Potential in Electronic Instrumentation for Ionising Radiation Environments Ministarstvo nauke, tehnološkog razvoja i inovacija Republike Srbije, institucionalno finansiranje - 200102 (Univerzitet u Nišu, Elektronski fakultet) |
Metadata source: | (Preuzeto iz CrossRef-a) Mitrović, Nikola (Preuzeto iz Nasi u WoS) |
M-category: | 22M22 |
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