Results

eNauka >  Rezultati >  Recovery Analysis of Sequentially Irradiated and NBT-Stressed VDMOS Transistors
Naziv: Recovery Analysis of Sequentially Irradiated and NBT-Stressed VDMOS Transistors
Autori: Đorić Veljković, Snežana  ; Živanović, Emilija  ; Davidović, Vojkan  ; Veljković, Sandra  ; Mitrović, Nikola  ; Ristić, Goran  ; Paskaleva, Albena; Spassov, Dencho; Danković, Danijel  
Godina: 2024
Publikacija: Micromachines
ISSN: 2072-666X Micromachines Pretraži identifikator
Izdavač: MDPI
Tip rezultata: Naučni članak
Kolacija: vol. 16 br. 1 str. 27-27
DOI: 10.3390/mi16010027
WoS-ID: 001404382600001
Scopus-ID: 2-s2.0-85216126487
PMID: 39858683
PMCID: PMC11767675
URI: https://enauka.gov.rs/handle/123456789/958715
Projekat: European Union's Horizon 2024 research and innovation program [SPS G5974-"High-k Dielectric RADFET]
European Union's Horizon 2024 research and innovation program through the AIDA4Edge Twinning project [101160293]
Ministry of Science, Technological Development and Innovation of the Republic of Serbia [451-03-65/2024-03/200102, 451-03-65/2024-03/200095]
Izvor metapodataka: (Preuzeto iz CrossRef-a) Veljković, Sandra
M-kategorija: 
21M21 - Vodeći međunarodni časopis kategorije M21

3
SCOPUSTM
1
WEB OF SCIENCETM
Altmetric
Dimensions
Unpaywall

Items in eNauka are protected by copyright, with all rights reserved, unless otherwise indicated.