Results
eNauka >
Rezultati >
Proposal of Dual-Gate Oxide Layered with HfO2: Comparative Results with SiO2-RadFET
| Naziv: | Proposal of Dual-Gate Oxide Layered with HfO2: Comparative Results with SiO2-RadFET | Autori: | Yilmaz, Ercan; Ristić, Goran   ; Turan, Rasit; Yilmaz, Ozan; Gurer, Umutcan; Danković, Danijel ; Budak, Erhan; Marjanović, Miloš ; Veljković, Sandra ; Mutale, Alex; |
Godina: | 2025 | Publikacija: | Radiation Physics and Chemistry | ISSN: | 0969-806X Radiation Physics and Chemistry Pretraži identifikator |
Tip rezultata: | Naučni članak | Kolacija: | vol. 232 str. 112691-112691 | DOI: | 10.1016/j.radphyschem.2025.112691 | WoS-ID: | 001449822400001 | Scopus-ID: | 2-s2.0-86000597822 | URI: | https://enauka.gov.rs/handle/123456789/973225 | Projekat: | North Atlantic Treaty Organization (NATO) SPS MYP [G5974] | Izvor metapodataka: | (Preuzeto iz CrossRef-a) Marjanović, Miloš | M-kategorija: | 21aM21a - Vodeći međunarodni časopis kategorije M21a |
Items in eNauka are protected by copyright, with all rights reserved, unless otherwise indicated.