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Browsing by Author Jankovic, Nebojsa D
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| Issue Date | Title | Author(s) | Type | Мp-cat. |
|---|---|---|---|---|
| 2005 | A compact nonquasi-static MOSFET model based on the equivalent nonlinear transmission line | Pesic, Tatjana V; Jankovic, Nebojsa D | Article | 21M21 |
| 2003 | A model for capacitance reconstruction from measured lossy MOS capacitance-voltage characteristics | Kwa, KSK; Chattopadhyay, S; Jankovic, Nebojsa D; Olsen, SH; Driscoll, LS; O'Neill, AG | Article | 21M21 |
| 2022 | A physics-based electrical model of a magnetically sensitive AlGaN/GaN HEMT | Jankovic, Nebojsa D; Faramehr, Soroush; Igic, Petar | Article | 22M22 |
| 2007 | All injection level power PiN diode model including temperature dependence | Jankovic, Nebojsa D; Pesic, Tatjana V; Igic, Petar | Article | 21M21 |
| 2006 | An advance physics-based sub-circuit model of IGBT | Jankovic, Nebojsa D; Zhou, Zhongfu; Batcup, Steve; Igic, Petar | Conference Paper | Mp. category will be shown later |
| 2009 | An advanced physics-based sub-circuit model of a punch-trough insulated gate bipolar transistor | Jankovic, Nebojsa D; Zhou, Zhongfu; Batcup, Steve; Igic, Petar | Article | 22M22 |
| 2001 | An analytical model of the inverse base width modulation effect in SiGe graded heterojunction bipolar transistors | Pesic, Tatjana V; Jankovic, Nebojsa D | Article | 22M22 |
| 2018 | Analysis of GaN MagHEMTs | Faramehr, Soroush; Jankovic, Nebojsa D; Igic, Petar | Article | 22M22 |
| 2004 | Comparative analysis of the DC performance of DG MOSFETs on highly-doped and near-intrinsic silicon layers | Jankovic, Nebojsa D; Armstrong, GA | Article | 22M22 |
| 2019 | Development of GaN Transducer and On-Chip Concentrator for Galvanic Current Sensing | Faramehr, Soroush; Poluri, Nagaditya; Igic, Petar; Jankovic, Nebojsa D; De, Souza Maria Merlyne | Article | 21M21 |
| 2018 | Dual-Drain GaN Magnetic Sensor Compatible With GaN RF Power Technology | Igic, Petar; Jankovic, Nebojsa D; Evans, Jon; Elwin, Matthew; Batcup, Stephen; Faramehr, Soroush | Article | 21M21 |
| 2007 | Dynamic MAGFET model for sensor simulations | Jankovic, Nebojsa D; Pesic, Tatjana V; Pantic, Dragan S   | Article | Mp. category will be shown later |
| 2003 | Enhanced performance virtual substrate heterojunction bipolar transistor using strained-Si/SiGe emitter | Jankovic, Nebojsa D; O'Neill, AG | Article | 21M21 |
| 2016 | Experimental Evaluation of Circuit-Based Modeling of the NBTI Effects in Double-Gate FinFETs | Jankovic, Nebojsa D; Young, Chadwin D | Article | 22M22 |
| 2019 | Gan Current Transducers for Harsh Environments | Faramehr, Soroush; Jankovic, Nebojsa D; Igic, Petar | Conference Paper | Mp. category will be shown later |
| 2017 | High Sensitivity Dual-Gate Four-Terminal Magnetic Sensor Compatible With SOI FinFET Technology | Jankovic, Nebojsa D; Kryvchenkova, Olga; Batcup, Steve; Igic, Petar | Article | 21M21 |
| 2017 | High Sensitivity Magnetic Sensors Compatible with Bulk Silicon and SOI IC Technology | Igic, Petar; Kryvchenkova, Olga; Faramehr, Soroush; Batcup, Steve; Jankovic, Nebojsa D | Conference Paper | Mp. category will be shown later |
| 2006 | Modelling of strained-Si/SiGe NMOS transistors including DC self-heating | Jankovic, Nebojsa D; Pesic, Tatjana V; O'Neill, AG | Article | 21M21 |
| 2005 | Non-quasi-static physics-based circuit model of fully-depleted double-gate SOI MOSFET | Jankovic, Nebojsa D; Pesic, Tatjana V | Article | 21M21 |
| 2004 | Physical-based non-quasi static MOSFET model for DC, AC and transient circuit analysis | Pesic, Tatjana V; Jankovic, Nebojsa D | Conference Paper | Mp. category will be shown later |