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eNauka >  Results >  A stochastic model of gamma-ray induced oxide charge distribution and threshold voltage shift of MOS transistors
Title: A stochastic model of gamma-ray induced oxide charge distribution and threshold voltage shift of MOS transistors
Authors: Kevkić, Tijana  ; Odalovic, Mihajlo; Petkovic, Dragan
Issue Date: 2012
Publication: Nuclear Technology and Radiation Protection
ISSN: 1451-3994 Nuclear technology and radiation protection Search Idenfier
Type: Article
Collation: vol. 27 br. 1 str. 33-39
DOI: 10.2298/ntrp1201033k
WoS-ID: 000302262800005
Scopus-ID: 2-s2.0-84861754174
URI: https://enauka.gov.rs/handle/123456789/187184
Metadata source: Migrirano iz RIS podataka
M-category: 
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