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Modelling of Threshold Voltage Shift in Pulsed NBT Stressed P-Channel Power VDMOSFETs
| Title: | Modelling of Threshold Voltage Shift in Pulsed NBT Stressed P-Channel Power VDMOSFETs | Authors: | Danković, Danijel M. |
Issue Date: | 2017 | Publication: | 2017 IEEE 30TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (MIEL) | ISSN: | 2159-1660![]() Search Idenfier |
Publisher: | Niš, Serbia : IEEE | Type: | Conference Paper | ISBN: | 978-1-5386-2561-3 Search Idenfier |
Collation: | vol. 30 str. 147-151 | WoS-ID: | 000427499000030 | URI: | http://ieeexplore.ieee.org/document/8190089/ https://enauka.gov.rs/handle/123456789/214808 |
URL: | http://ieeexplore.ieee.org/document/8190089/ | Project: | Ministry of Education, Science and Technological Development of the Republic of Serbia [OI-171026, TR-32026] Serbian Academy of Sciences and Arts (SASA) [F-148] |
Metadata source: | Migracija | M-category: | Mp. category will be shown later |
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