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Annealing influence on recovery of electrically stressed power vertical double-diffused metal oxide semiconductor transistors
| Title: | Annealing influence on recovery of electrically stressed power vertical double-diffused metal oxide semiconductor transistors | Authors: | Đorić-Veljković, Snežana |
Issue Date: | 2015 | Publication: | JAPANESE JOURNAL OF APPLIED PHYSICS | ISSN: | 0021-4922 Japanese Journal of Applied Physics Search Idenfier |
Publisher: | United Kingdom : IOP Publishing | Type: | Article | Collation: | vol. 54 br. 6 str. 064101-064101 | DOI: | 10.7567/jjap.54.064101 | WoS-ID: | 000357818600016 | Scopus-ID: | 2-s2.0-84930421502 | URI: | https://enauka.gov.rs/handle/123456789/249377 | Project: | Ministry of Education, Science and Technological Development of the Republic of Serbia [OI171026] | Metadata source: | Migracija | M-category: | 22M22 |
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