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A method for separating the effects of interface from border and oxide trapped charge densities in MOS transistors
| Title: | A method for separating the effects of interface from border and oxide trapped charge densities in MOS transistors | Authors: | Savić, Z; Radjenovic, B | Issue Date: | 1997 | Publication: | Microelectronics and Reliability | ISSN: | 0026-2714 Microelectronics Reliability Search Idenfier |
Type: | Article | Collation: | vol. 37 br. 7 str. 1147-1150 | DOI: | 10.1016/S0026-2714(96)00277-6 | WoS-ID: | A1997WY85100019 | Scopus-ID: | 2-s2.0-0031191049 | URI: | https://enauka.gov.rs/handle/123456789/249856 https://vinar.vin.bg.ac.rs/handle/123456789/2061 |
M-category: | 23M23 |
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