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A method for separating the effects of interface from border and oxide trapped charge densities in MOS transistors
| Naziv: | A method for separating the effects of interface from border and oxide trapped charge densities in MOS transistors | Autori: | Savić, Z; Radjenovic, B | Godina: | 1997 | Publikacija: | Microelectronics and Reliability | ISSN: | 0026-2714 Microelectronics Reliability Pretraži identifikator |
Tip rezultata: | Naučni članak | Kolacija: | vol. 37 br. 7 str. 1147-1150 | DOI: | 10.1016/S0026-2714(96)00277-6 | WoS-ID: | A1997WY85100019 | Scopus-ID: | 2-s2.0-0031191049 | URI: | https://enauka.gov.rs/handle/123456789/249856 https://vinar.vin.bg.ac.rs/handle/123456789/2061 |
M-kategorija: | 23M23 - Međunarodni časopis kategorije M23 |
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