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| Title: | Defect Behaviors During High Electric Field Stress of p-Channel Power MOSFETs | Authors: | Ristić, Goran   |
Issue Date: | 2012 | Publication: | IEEE Transactions on Device and Materials Reliability | ISSN: | 1530-4388 IEEE Transactions on Device and Materials Reliability Search Idenfier |
Type: | Article | Collation: | vol. 12 br. 1 str. 94-100 | DOI: | 10.1109/tdmr.2011.2168399 | WoS-ID: | 000301236700014 | Scopus-ID: | 2-s2.0-84858118262 | URI: | https://enauka.gov.rs/handle/123456789/291590 | Metadata source: | Migrirano iz RIS podataka | M-category: | 21M21 |
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