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eNauka >  Results >  Application of p-Channel Power VDMOSFET as a High Radiation Doses Sensor
Title: Application of p-Channel Power VDMOSFET as a High Radiation Doses Sensor
Authors: Pejović, Milić  
Issue Date: 2015
Publication: IEEE Transactions on Nuclear Science
ISSN: 0018-9499 IEEE Transactions on Nuclear Science Search Idenfier
Type: Article
Collation: vol. 62 br. 4 str. 1905-1910
DOI: 10.1109/tns.2015.2456211
WoS-ID: 000360016400026
Scopus-ID: 2-s2.0-85027944552
URI: https://enauka.gov.rs/handle/123456789/294809
Metadata source: Migrirano iz RIS podataka
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